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It was dedicated to the rapid dissemination of peer-reviewed and concise research reports in fundamental and applied areas of solid-state science and technology. SSL is preserved as an archive. Journal archive Vol 4, 2015 Vol 3, 2014 Vol 2, 2013 Vol 1, 2012 Most read Trending Most read Open all abstracts , in this tab The following article is Open access Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed Yi-Jung Chen and Ya-Hsiang Tai 2015 ECS Solid State Lett. 4 Q10 Open abstract View article , Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed PDF , Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided by parameter measure unit. It is conventionally studied by double sweeping Vg with the default setup of the source measure units, which speed may vary with the current level. By manipulating the step time of sweeping Vg, we found that the response time of charge traps or donor-like states is in the range that overlaps with the conventional time step in...
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